BC847BPDXV6T1 datasheet(4/8 Pages) ONSEMI

номер детали	BC847BPDXV6T1

подробное описание детали	Dual General Purpose Transistor

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BC847BPDXV6T1, BC847BPDXV6T5

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TYPICAL NPN CHARACTERISTICS

Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

0.2

0.5

1.0

10

20

50

0.2

100

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base-Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

2.0

5.0

200

0.6

0.7

0.8

0.9

1.0

0.5

0

0.2

0.4

0.1

0.3

1.6

1.2

2.0

2.8

2.4

1.2

1.6

2.0

0.02

1.0

10

0

20

0.1

0.4

0.8

1.5

1.0

0.8

0.6

0.4

0.3

0.2

0.5

1.0

10

20

50

2.0

100

70

30

7.0

5.0

3.0

0.7

0.3

0.1

0.2

1.0

10

100

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

VCE = 10 V

TA = 25°C

−55°C to +125°C

TA = 25°C

IC = 50 mA

IC = 100 mA

IC = 200 mA

IC =

20 mA

IC =

10 mA

1.0

Figure 5. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

10

Figure 6. Current-Gain - Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

0.4 0.6

1.0

10

20

1.0

2.0

6.0

40

80

100

200

300

400

60

20

40

30

7.0

5.0

3.0

2.0

0.7 1.0

10

20

2.0

50

30

7.0

5.0

3.0

0.5

VCE = 10 V

TA = 25°C

0.8

4.0

8.0

TA = 25°C

Cob

Cib

Аналогичный номер детали - BC847BPDXV6T1

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	BC847BPDXV6T1	82Kb / 8P	Dual General Purpose Transistor September, 2005 ??Rev. 1
	BC847BPDXV6T1D	82Kb / 8P	Dual General Purpose Transistor September, 2005 ??Rev. 1
	BC847BPDXV6T1G	82Kb / 8P	Dual General Purpose Transistor September, 2005 ??Rev. 1
	BC847BPDXV6T1G	116Kb / 6P	NPN/PNP Dual General Purpose Transistor May, 2013 ??Rev. 2
	BC847BPDXV6T1	82Kb / 8P	Dual General Purpose Transistor September, 2005 ??Rev. 1

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Аналогичное описание - BC847BPDXV6T1

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