поискавой системы для электроныых деталей |
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2SJ606-ZJ датащи(PDF) 7 Page - NEC |
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2SJ606-ZJ датащи(HTML) 7 Page - NEC |
7 / 8 page Data Sheet D14654EJ3V0DS 7 2SJ606 PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut) 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 10.6 MAX. 10.0 TYP. 3.6±0.2 4 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 1.3±0.2 0.5±0.2 2.8±0.2 φ 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 10 TYP. 1.3±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 1.3±0.2 0.5±0.2 2.8±0.2 4 3) TO-263 (MP-25ZJ) 4) TO-220SMD (MP-25Z) Note 1.4±0.2 2.54 TYP. 2.54 TYP. 123 4 4.8 MAX. 1.3±0.2 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.7±0.2 10 TYP. 0.5R TYP. 0.8R TYP. 10 TYP. 1.4±0.2 2.54 TYP. 2.54 TYP. 123 4 4.8 MAX. 1.3±0.2 0.5±0.2 0.5R TYP. 0.8R TYP. 0.75±0.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note This package is produced only in Japan. EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 5 |
Аналогичный номер детали - 2SJ606-ZJ |
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Аналогичное описание - 2SJ606-ZJ |
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