Document No. D16119EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTORS

2SA1615, 1615-Z

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

©

2002

The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation

and are ideal for high-efficiency DC/DC converters due to the fast switching speed.

FEATURES

• Large current capacity:

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC

Corporation to know the specification of quality grade on the devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

−30

V

Collector to emitter voltage

−20

V

Emitter to base voltage

−10

V

Collector current (DC)

−10

A

Collector current (pulse)

−15

A

Base current (DC)

−0.5

A

Total power dissipation

°C)**

1.0

W

Total power dissipation

°C)

15

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

*PW

≤ 10 ms, duty cycle ≤ 50%

** Printing board mounted