TPCS8104

2002-04-05

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

TPCS8104

Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

• Small footprint due to small and thin package

Characteristics

Symbol

Rating

Unit

Drain-source voltage

−30

V

−30

V

Gate-source voltage

±20

V

DC

(Note 1)

−11

Drain current

Pulse (Note 1)

−44

A

Drain power dissipation (t

= 10 s)

(Note 2a)

1.1

W

Drain power dissipation (t

= 10 s)

(Note 2b)

0.6

W

Single pulse avalanche energy

(Note 3)

31.5

mJ

Avalanche current

−11

A

Repetitive avalanche energy

(Note 2a) (Note 4)

0.11

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the

next page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3R1B

Weight: 0.035 g (typ.)

Circuit Configuration

8

7

6

5

1

2

3

4