поискавой системы для электроныых деталей |
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93AA66BTESN датащи(PDF) 7 Page - Microchip Technology |
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93AA66BTESN датащи(HTML) 7 Page - Microchip Technology |
7 / 24 page 2003 Microchip Technology Inc. DS21795B-page 7 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 2.5 ERASE ALL (ERAL) The Erase All (ERAL) instruction will erase the entire memory array to the logical ‘1’ state. The ERAL cycle is identical to the ERASE cycle, except for the different opcode. The ERAL cycle is completely self-timed and commences at the falling edge of the CS, except on ‘93C’ devices where the rising edge of CLK before the last data bit initiates the write cycle. Clocking of the CLK pin is not necessary after the device has entered the ERAL cycle. The DO pin indicates the READY/BUSY status of the device, if CS is brought high after a minimum of 250 ns low (TCSL). Note: Issuing a Start bit and then taking CS low will clear the READY/BUSY status from DO. VCC must be ≥ 4.5V for proper operation of ERAL. FIGURE 2-3: ERAL TIMING FOR 93AA AND 93LC DEVICES FIGURE 2-4: ERAL TIMING FOR 93C DEVICES CS CLK DI DO TCSL CHECK STATUS 10 0 1 0 X ••• X TSV TCZ BUSY READY HIGH-Z TEC HIGH-Z VCC must be ≥ 4.5V for proper operation of ERAL. CS CLK DI DO TCSL CHECK STATUS 10 0 1 0 X ••• X TSV TCZ BUSY READY HIGH-Z TEC HIGH-Z |
Аналогичный номер детали - 93AA66BTESN |
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Аналогичное описание - 93AA66BTESN |
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