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WS7916DC датащит (PDF) 3 Page - Will Semiconductor Ltd.

№ деталь WS7916DC
подробность  CMOS High Gain GPS LNA
скачать  7 Pages
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производитель  WILLSEMI [Will Semiconductor Ltd.]
домашняя страница  http://www.willsemi.com/index.php?siteid=2
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WS7916DC Datasheet(HTML) 3 Page - Will Semiconductor Ltd.

   
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WS7916DC
Will Semiconductor Ltd.
3
Jan.2018_Rev. 1.6
Quick Reference Data
Freq = 1575.42 MHz; VCC = 2.8 V; VEN >1.2 V; Temp = 25C; input matched to 50 Ω with a 10 nH inductor. The
condition is applied unless otherwise specified.
Symbol
Parameter
Condition
Min
Typ
Max
Unit
VCC
Supply voltage
1.6
2.8
3.1
V
ICC
Supply current
8.0
mA
Gp
Power gain
17.0
dB
NF
Noise figure
0.60
dB
IP1dB
Input power at 1dB gain compression
-7.0
dBm
IIP3
Input third-order intercept point
+4.0
dBm
Recommended Operating Conditions
Symbol
Parameter
Condition
Min
Typ
Max
Unit
VCC
Supply voltage
1.6
2.8
3.1
V
Temp
Ambient temperature
-40
+25
+85
C
VEN
Input voltage on pin 6 (EN)
OFF state
0
0.3
V
ON state
1.2
VCC
V
Absolute Maximum Ratings
Maximum ratings are absolute ratings, exceeding only one of these values may cause irreversible damage to
the integrated circuit.
Symbol
Parameter
Condition
Min
Max
Unit
VCC
Supply voltage
-0.3
3.3
V
VEN
Input voltage on pin EN
-0.3
3.3
V
VRFIN
Input voltage on pin RFIN
-0.3
3.3
V
VRFOUT
Input voltage on pin RFOUT
-0.3
3.3
V
Pin
RF input power
0
dBm
TSTG
Storage temperature
-65
+150
°C
TJ
Junction temperature
150
°C
VESD
ESD capability all pins
Human Body Model (HBM)
±2000
V


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