WS7918DC datasheet(4/7 Pages) WILLSEMI

номер детали	WS7918DC

подробное описание детали	CMOS High Gain GPS LNA

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производитель	WILLSEMI [Will Semiconductor Ltd.]

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WS7918DC

Will Semiconductor Ltd.

4

Jan, 2018 - Rev. 1.6

Characteristics

1550

MHz ≤ f ≤ 1615 MHz; V

CC = 2.8 V; VEN > 1.2 V; Temp = 25C; input mated to 50 Ω with a 10 nH

inductor; The condition is applied unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICC

Supply current

On state

7.5

mA

Off state

8.0

10.0

μA

Gp

Power gain

f = 1575 MHz

16.5

dB

RLin

Input return loss

f = 1575 MHz

6.5

dB

RLout

Output return loss

f = 1575 MHz

18.0

dB

ISL

Reverse isolation

f = 1575 MHz

27.0

dB

NF

Noise figure

f = 1575 MHz

0.65

dB

IP1dB

Input power at 1 dB gain

compression

f = 1575 MHz

-5.0

dBm

IIP3

Input third-order intercept

point

[1]

+5.0

dBm

K

Rollett stability factor

[2]

1

ton

Turn-on time

5

μs

toff

Turn-off time

5

μs

[1] f1 = 1713 MHz, f2 = 1851 MHz, Pin = -20 dBm

[2] 10M~20GHz

Аналогичный номер детали - WS7918DC

производитель	номер детали	датащи	подробное описание детали
Will Semiconductor Ltd.	WS7916DC	917Kb / 7P	CMOS High Gain GPS LNA
	WS7916DC-6/TR	917Kb / 7P	CMOS High Gain GPS LNA
	WS7916S	813Kb / 6P	CMOS High Gain GPS LNA
	WS7916S-6/TR	813Kb / 6P	CMOS High Gain GPS LNA
	WS7919S	729Kb / 9P	CMOS High Gain GPS LNA

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Аналогичное описание - WS7918DC

производитель	номер детали	датащи	подробное описание детали
Will Semiconductor Ltd.	WS7916S	813Kb / 6P	CMOS High Gain GPS LNA
	WS7919S	729Kb / 9P	CMOS High Gain GPS LNA
	WS7916DC	917Kb / 7P	CMOS High Gain GPS LNA
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Taoglas antenna solutio...	MA203.A.AB.035	1Mb / 10P	GPS-High gain LNA up to 32dB
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AVAGO TECHNOLOGIES LIMI...	MGA-231T6	204Kb / 15P	High-Gain GPS LNA with Variable Current and Shutdown Function
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