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WS7931DB датащит (PDF) 3 Page - Will Semiconductor Ltd.

№ деталь WS7931DB
подробность  CMOS Medium Band LTE LNA
скачать  7 Pages
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производитель  WILLSEMI [Will Semiconductor Ltd.]
домашняя страница  http://www.willsemi.com/index.php?siteid=2
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WS7931DB Datasheet(HTML) 3 Page - Will Semiconductor Ltd.

   
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WS7931DB
Will Semiconductor Ltd.
3
Aug, 2018 _ Rev. 1.5
Quick Reference Data
f = 1960 MHz; VCC = 2.8 V; VEN = VCC; Temp = 25
C; input matched to 50 Ω with a 5.6 nH inductor. The
condition is applied unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Unit
Test Condition
VCC
Supply voltage
1.8
2.8
3.1
V
ICC
Supply current
5.0
6.8
10
mA
Gain mode
6
9
12
μA
Bypass mode
Gp
Power gain
f = 2140MHz
11.0
13.5
15.5
dB
Gain mode
-3.0
-4.0
dB
Bypass mode
NF
Noise figure
f = 2140MHz
0.85
1.3
dB
Gain mode
IP1dB
Input 1dB compression point
f = 2140MHz
-8.0
dBm
Gain mode
+4.5
dBm
Bypass mode
IIP3
Input third-order intercept point
f = 1843MHz
+4.0
dBm
Gain mode
+27.0
dBm
Bypass mode
Recommended Operating Conditions
Symbol
Parameter
Condition
Min
Typ
Max
Unit
VCC
Supply voltage
1.8
2.8
3.1
V
Temp
Ambient temperature
-40
+25
+85
C
VEN
Input voltage on pin 6 (EN)
Bypass mode
0
0.3
V
Gain mode
1.2
VCC
V
Absolute Maximum Ratings
Maximum ratings are absolute ratings, exceeding only one of these values may cause irreversible damage to
the integrated circuit.
Symbol
Parameter
Condition
Min
Max
Unit
VCC
Supply voltage
-0.3
3.1
V
VEN
Input voltage on pin EN
-0.3
3.1
V
VRFIN
Input voltage on pin RFIN
-0.3
3.1
V
VRFOUT
Input voltage on pin RFOUT
-0.3
3.1
V
Pin
RF input power
25
dBm
TSTG
Storage temperature
-65
+150
°C
TJ
Junction temperature
150
°C
VESD
ESD capability all pins
Human Body Model (HBM)
±2000
V


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