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WS7931DB датащит (PDF) 4 Page - Will Semiconductor Ltd.

№ деталь WS7931DB
подробность  CMOS Medium Band LTE LNA
скачать  7 Pages
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производитель  WILLSEMI [Will Semiconductor Ltd.]
домашняя страница  http://www.willsemi.com/index.php?siteid=2
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WS7931DB Datasheet(HTML) 4 Page - Will Semiconductor Ltd.

   
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WS7931DB
Will Semiconductor Ltd.
4
Aug, 2018 _ Rev. 1.5
Characteristics
1805
MHz ≤ f ≤ 2200 MHz; VCC = 2.8 V; VEN = VCC; Temp = 25
C; input matched to 50 Ω with a 5.6 nH
inductor; The condition is applied unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICC
Supply current
5.0
6.8
10.0
mA
Gp
Power gain
f = 1843 MHz
11.0
13.5
15.5
dB
f = 1960 MHz
11.0
13.5
16.0
dB
f = 2140 MHz
11.0
12.8
15.5
dB
RLin
Input return loss
f = 1843 MHz
5.0
6.0
dB
f = 1960 MHz
6.0
7.2
dB
f = 2140 MHz
6.5
8.5
dB
RLout
Output return loss
f = 1843 MHz
8.0
12.0
dB
f = 1960 MHz
10.0
18.0
dB
f = 2140 MHz
10.0
17.0
dB
ISL
Reverse isolation
f = 1843 MHz
20.0
25.0
dB
f = 1960 MHz
20.0
24.0
dB
f = 2140 MHz
20.0
24.0
dB
NF
Noise figure
f = 1843 MHz
0.80
1.3
dB
f = 1960 MHz
0.85
1.3
dB
f = 2140 MHz
0.90
1.4
dB
IP1dB
Input power at 1 dB
gain compression
f = 1850 MHz
-8.5
dBm
f = 2150 MHz
-8.0
dBm
IIP3
Input third-order
intercept point
f = 1850 MHz[1]
+4.0
dBm
f = 2150 MHz[2]
+4.5
dBm
K[3]
Rollett stability factor
1
ton
Turn-on time
5
μs
toff
Turn-off time
5
μs
[1] f1 = 1840 MHz, f2 = 1850 MHz, Pin = -25 dBm
[2] f1 = 2140 MHz, f2 = 2150 MHz, Pin = -25 dBm
[3] 10M~20GHz


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