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S80016LK7MK9TW-75A датащи(PDF) 4 Page - List of Unclassifed Manufacturers

номер детали S80016LK7MK9TW-75A
подробное описание детали  SYVCHRONOUS DRAM
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производитель  ETC1 [List of Unclassifed Manufacturers]
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S80016LK7MK9TW-75A датащи(HTML) 4 Page - List of Unclassifed Manufacturers

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128Mb: x4, x8, x16
SDRAM 3.3V
PDF: 09005aef807827f6 / Source: 09005aef807825bd
128Mb SDRAM
Rev: 11/29/2004
4
www.spectek.com
SpecTek reserves the right to change products or
specifications without notice.
© 2001, 2002, 2004 SpecTek
AC ELECTRICAL CHARACTERISTICS: Vdd = 3.3V
± 10%V, Temp. = 25° to 70°C
AC CHARACTERISTICS
-75A
-75A
-8A
-8A
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
UNITS
NOTES
Access time from CLK (positive edge) CL = 3
tAC
5.4
6
ns
Access time from CLK (positive edge) CL = 2
tAC
N/A
ns
Address hold time
tAH
0.8
1
ns
Address setup time
tAS
1.5
2
ns
CLK high level width
tCH
2.5
3
ns
CLK low level width
tCL
2.5
3
ns
Clock cycle time CL = 3
tCK
7.5
10
ns
Clock cycle time CL = 2
tCK
N/A
ns
CKE hold time
tCKH
0.8
1
ns
CKE setup time
tCKS
1.5
2
ns
CS#, RAS#, CAS#, WE#, DQM hold time
tCMH
0.8
1
ns
CS#, RAS#, CAS#, WE#, DQM setup time
tCMS
1.5
2
ns
Data-in hold time
tDH
0.8
1
ns
Data-in setup time
tDS
1.5
2
ns
Data-out high impedance time
tHZ
9
9
ns
4
Data-out low impedance time
tLZ
1
2
ns
Data-out hold time
tOH
2.7
3
ns
ACTIVE to PRECHARGE command period
tRAS
44
16K
50
16K
ns
AUTO REFRESH to ACTIVE command period
tRC
60
80
ns
ACTIVE to READ or WRITE delay
tRCD
22.5
30
ns
Refresh period (4096 cycles)
tREF
64
64
ms
PRECHARGE command period
tRP
22.5
30
ns
ACTIVE bank A to bank B command period
tRRD
15
20
ns
Transition time
tT
0.3
2
0.3
2
ns
Write recovery time
tWR
20
20
ns
3
Exit SELF REFRESH to ACTIVE command
tXSR
8
8
tCK
READ/WRITE command to READ/WRITE command
tCCD
1
1
tCK
1
CKE to clock disable or power down entry mode
tCKED
1
1
tCK
2
CKE to clock enable or power down exit setup
tPED
1
1
tCK
2
AC ELECTRICAL CHARACTERISTICS: Vdd = 3.3V
± 10%V, Temp. = 25° to 70°C
AC CHARACTERISTICS
-75A
-75A
-8
-8
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
UNITS
NOTES
DQM to input data delay
tDQD
0
0
tCK
1
WRITE command to input data delay
tDWD
0
0
tCK
1
Data-in to ACTIVATE command w/ Auto precharge
tDAL
5
5
tCK
3
Data-in to precharge
tDPL
2
2
tCK
2, 3
Last data-in to precharge command
tRDL
2
2
tCK
1
LOAD MODE REGISTER command to command
tMRD
2
2
tCK
1
Data-out to high impedance from precharge
tROH
3
3
tCK
1
NOTES:
1.
Clocks required specified by JEDEC functionality and not dependent on any timing parameter.
2.
Timing actually specified by tCKS, clock(s) specified as a reference only at a minimum cycle rate.
3.
Timing actually specified by tWR plus tRP clock(s) specified as a reference only at a minimum cycle rate.
4.
tHZ defines the time at which the output achieves the open circuit condition; it is not a reference to Voh or Vol. The last valid data
element will meet tOH before going high-Z.
5.
Based on tCK = 10ns for –8 and tCK = 7.5ns for –75a


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