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TLP4222G датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали TLP4222G
подробное описание детали  Telecommunication Measurement Equipment Security Equipment FA
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP4222G датащи(HTML) 2 Page - Toshiba Semiconductor

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TLP4222G,TLP4222G-2
2002-12-26
2
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Forward current
IF
50
mA
Forward current derating (Ta >= 25°C)
DIF/°C
-0.5
mA/°C
Peak forward current (100
ms pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Off-state output terminal voltage
VOFF
350
V
TLP4222G
One channel operation
On-state current
TLP4222G-2
Two channel operations
ION
100
mA
TLP4222G
One channel operation
On-state current derating
(Ta >= 25°C)
TLP4222G-2
Two channel operations
DION/°C
-1.0
mA/°C
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55 to 125
°C
Operating temperature range
Topr
-40 to 85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 1 min, R.H. <= 60%)
(Note 1)
BVS
2500
Vrms
Note 1: For TLP4222G, Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together.
For TLP4222G-2, Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together.
Recommended Operating Conditions
Characteristics
Symbol
Min
Typ.
Max
Unit
Supply voltage
VDD
¾
¾
280
V
Forward current
IF
5
¾
25
mA
On-state current
ION
¾
¾
100
mA
Operating temperature
Topr
-20
¾
65
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
¾
¾
10
mA
Capacitance
CT
V
= 0, f = 1 MHz
¾
30
¾
pF
Off-state current
IOFF
VOFF = 350 V, IF = 5 mA
¾
¾
1
mA
Capacitance
COFF
V
= 0, f = 1 MHz, IF = 5 mA
¾
30
¾
pF


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