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BYW29ED-200 датащит (PDF) 1 Page - WeEn Semiconductors

№ деталь BYW29ED-200
подробность  Ultrafast power diode
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производитель  WEEN [WeEn Semiconductors]
домашняя страница  http://www.ween-semi.com
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BYW29ED-200 Datasheet(HTML) 1 Page - WeEn Semiconductors

 
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BYW29ED-200
Ultrafast power diode
26 September 2018
Product data sheet
1. General description
Ultrafast, epitaxial rectifier diode in a SOT428 (DPAK) surface-mountable package.
2. Features and benefits
Low forward voltage drop
Fast switching
Soft recovery characteristic
Surface-mountable package
High thermal cycling performance
Low thermal resistance
3. Applications
High-frequency switched-mode power supplies
Low loss rectification
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VR
reverse voltage
DC
-
-
200
V
VRRM
repetitive peak reverse
voltage
-
-
200
V
IF(AV)
average forward
current
δ = 0.5 ; Tmb ≤ 128 °C; square-wave
pulse; Fig. 1; Fig. 2
-
-
8
A
IFSM
non-repetitive peak
forward current
tp = 10 ms; Tj(init) = 25 °C; sine-wave
pulse; with reapplied VRRM(Max)
-
-
80
A
Static characteristics
IF = 8 A; Tj = 25 °C; Fig. 5
-
0.92
1.05
V
IF = 20 A; Tj = 25 °C; Fig. 5
-
1.1
1.3
V
VF
forward voltage
IF = 8 A; Tj = 150 °C; Fig. 5
-
0.8
0.895 V
Dynamic characteristics
IF = 1 A; VR = 30 V; dIF/dt = 100 A/
µs; Tj = 25 °C; ramp recovery; Fig. 6;
Fig. 7; Fig. 8
-
20
25
ns
trr
reverse recovery time
step recovery; when switched from IF =
0.5 A to IR = 1 A measured at IR = 0.25
A
-
15
20
ns


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