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BYW29ED-200 датащит (PDF) 5 Page - WeEn Semiconductors

№ деталь BYW29ED-200
подробность  Ultrafast power diode
скачать  11 Pages
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производитель  WEEN [WeEn Semiconductors]
домашняя страница  http://www.ween-semi.com
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BYW29ED-200 Datasheet(HTML) 5 Page - WeEn Semiconductors

 
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WeEn Semiconductors
BYW29ED-200
Ultrafast power diode
BYW29ED-200
All information provided in this document is subject to legal disclaimers.
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
26 September 2018
5 / 11
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IF = 8 A; Tj = 25 °C; Fig. 5
-
0.92
1.05
V
IF = 20 A; Tj = 25 °C; Fig. 5
-
1.1
1.3
V
VF
forward voltage
IF = 8 A; Tj = 150 °C; Fig. 5
-
0.8
0.895 V
VR = 200 V; Tj = 25 °C
-
2
10
µA
IR
reverse current
VR = 200 V; Tj = 100 °C
-
0.2
0.6
mA
Dynamic characteristics
IF = 1 A; VR = 30 V; dIF/dt = 100 A/
µs; Tj = 25 °C; ramp recovery; Fig. 6;
Fig. 7; Fig. 8
-
20
25
ns
trr
reverse recovery time
step recovery; when switched from IF =
0.5 A to IR = 1 A measured at IR = 0.25
A
-
15
20
ns
IRM
peak reverse recovery
current
IF = 10 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C; Fig. 9
-
-
1.8
A
Qr
recovered charge
IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs;
Tj = 25 °C; Fig. 10
-
4
11
nC
VFR
forward recovery
voltage
IF = 1 A; dIF/dt = 10 A/µs; Fig. 11
-
1
-
V
VF(V)
0
1.2
1.2
0.4
0.8
003aac674
12
6
18
24
IF
(A)
0
(2)
(1)
(3)
Vo = 0.791 V; Rs = 0.013 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 5. Forward current as a function of forward voltage
003aac562
trr
time
100 %
25 %
IF
dlF
dt
IR
IRM
Qr
Fig. 6. Reverse recovery definitions; ramp recovery


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