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BYW29EX датащи(PDF) 2 Page - WeEn Semiconductors |
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BYW29EX датащи(HTML) 2 Page - WeEn Semiconductors |
2 / 8 page WeEn Semiconductors Product specification Rectifier diodes BYW29EX series ultrafast, rugged GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated epitaxial rectifier SYMBOL PARAMETER MAX. MAX. UNIT diodes in a full pack plastic envelope, featuring low forward voltage drop, BYW29EX- 150 200 ultra-fast recovery times, soft recovery V RRM Repetitive peak reverse 150 200 V characteristic and guaranteed reverse voltage surge and ESD capability. They are V F Forward voltage 0.895 0.895 V intended for use in switched mode power I F(AV) Forward current 8 8 A supplies and high frequency circuits in t rr Reverse recovery time 25 25 ns general where low conduction and I RRM Repetitive peak reverse 0.2 0.2 A switching losses are essential. current PINNING - SOD113 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -150 -200 V RRM Repetitive peak reverse voltage - 150 200 V V RWM Crest working reverse voltage - 150 200 V V R Continuous reverse voltage - 150 200 V I F(AV) Average forward current 1 square wave; δ = 0.5; T hs ≤ 106 ˚C - 8 A sinusoidal; a = 1.57; T hs ≤ 109 ˚C - 7.3 A I F(RMS) RMS forward current - 11.3 A I FRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A T hs ≤ 106 ˚C I FSM Non-repetitive peak forward t = 10 ms - 80 A current t = 8.3 ms - 88 A sinusoidal; with reapplied V RWM(max) I 2tI2t for fusing t = 10 ms - 32 A 2s I RRM Repetitive peak reverse current t p = 2 µs; δ = 0.001 - 0.2 A I RSM Non-repetitive peak reverse t p = 100 µs - 0.2 A current T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C 1 Neglecting switching and reverse current losses September 2018 1 Rev 1. 300 mb 1 2 TO-220F (SOD113) A 001aaa020 K |
Аналогичный номер детали - BYW29EX |
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Аналогичное описание - BYW29EX |
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