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BYW29EX датащит (PDF) 3 Page - WeEn Semiconductors

№ деталь BYW29EX
подробность  Rectifier diodes ultrafast, rugged
скачать  8 Pages
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производитель  WEEN [WeEn Semiconductors]
домашняя страница  http://www.ween-semi.com
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BYW29EX Datasheet(HTML) 3 Page - WeEn Semiconductors

   
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WeEn Semiconductors
Product specification
Rectifier diodes
BYW29EX series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from
f = 50-60 Hz; sinusoidal
-
2500
V
both terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz
-
10
-
pF
to external heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
5.5
K/W
heatsink
without heatsink compound
-
-
7.2
K/W
R
th j-a
Thermal resistance junction to
in free air
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 8 A; Tj = 150˚C
-
0.80
0.895
V
I
F = 8 A
-
0.92
1.05
V
I
F = 20 A
-
1.1
1.3
V
I
R
Reverse current
V
R = VRWM; Tj = 100 ˚C
-
0.2
0.6
mA
V
R = VRWM
-2
10
µA
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Q
s
Reverse recovery charge
I
F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs-
4
11
nC
t
rr1
Reverse recovery time
I
F = 1 A; VR ≥ 30 V;
-
20
25
ns
-dI
F/dt = 100 A/µs
t
rr2
Reverse recovery time
I
F = 0.5 A to IR = 1 A; Irec = 0.25 A
-
15
20
ns
V
fr
Forward recovery voltage
I
F = 1 A; dIF/dt = 10 A/µs-
1
-
V
September 2018
2
Rev 1.
300


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