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EC103D1W датащит (PDF) 1 Page - WeEn Semiconductors

№ деталь EC103D1W
подробность  SCR
скачать  13 Pages
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производитель  WEEN [WeEn Semiconductors]
домашняя страница  http://www.ween-semi.com
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EC103D1W Datasheet(HTML) 1 Page - WeEn Semiconductors

 
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EC103D1W
SCR
21 August 2018
Product data sheet
1. General description
Planar passivated ultra sensitive gate Silicon Controlled Rectifier in a SOT223 surface mountable
plastic package.
2. Features and benefits
Planar passivated for voltage ruggedness and reliability
Ultra sensitive gate
Surface mountable package
3. Applications
Electronic ballasts
Safety shut down and protection circuits
Sensing circuits
Smoke detectors
Switched Mode Power Supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRRM
repetitive peak reverse
voltage
-
-
400
V
IT(AV)
average on-state
current
half sine wave; Tsp ≤ 114 °C; Fig. 1
-
-
0.5
A
IT(RMS)
RMS on-state current
half sine wave; Tsp ≤ 114 °C; Fig. 2;
Fig. 3
-
-
0.8
A
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5
-
-
8
A
ITSM
non-repetitive peak on-
state current
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms
-
-
9
A
Tj
junction temperature
-
-
125
°C
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 9
-
3
12
µA
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 268 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
-
150
-
V/µs


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