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FDR54E датащит (PDF) 1 Page - First Silicon Co., Ltd

№ деталь FDR54E
подробность  SCHOTTKYBARRIERDIODE
скачать  3 Pages
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производитель  FS [First Silicon Co., Ltd]
домашняя страница  http://www.firstsilicon.co.kr/
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FDR54E Datasheet(HTML) 1 Page - First Silicon Co., Ltd

   
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SCHOTTKY BARRIER DIODE
1
2
Cathode
Anode
SEMICONDUCTOR
TECHNICAL DATA
FDR54E
2013. 6. 26
1/3
Revision No : 0
SOD- 523
2
1
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low forward volt-
age reduces conduction loss. Miniature surface mount package is excellent for
hand held and portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ IF= 10 mAdc
• Device Marking: JV
ORDERING INFORMATION
We declare that the material of product
compliance with RoHS requirements.
FDR54E
JV
3000/Tape & Reel
Device
Marking
Shipping
MAXIMUM RATINGS (TJ=125°C unless otherwise noted )
t
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U
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a
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y
S
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t
a
R
V
e
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o
V
e
s
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e
R
R
30
V
THERMALCHARACTERISTICS
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c
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C
Total Device Dissipation FR-5 Board,*
PD
200
mW
TA = 25°C
C
°
/
W
m
7
5
.
1
C
°
5
2
e
v
o
b
a
e
t
a
r
e
D
Thermal Resistance Junction to Ambient
RθJA
635
°C/W
Junction Temperature
TJ
stg
125
°C
* FR-4 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
t
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x
a
M
p
y
T
n
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l
o
b
m
y
S
c
i
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s
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t
c
a
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a
h
C
Reverse Breakdown Voltage (I R = 10
µA)
V(BR)R
30
Volts
Total Capacitance (V R = 1.0 V, f = 1.0 MHz)
CT
——
10
pF
Reverse Leakage (V R
I
)
V
5
2
=
R
0.5
2.0
µAdc
Forward Voltage (I F
V
)
c
d
A
m
1
.
0
=
F
0.22
0.24
Vdc
Forward Voltage (I F
V
)
c
d
A
m
0
.
1
=
F
0.29
0.32
Vdc
Forward Voltage (I F = 10 mAdc)
VF
0.35
0.40
Vdc
Forward Voltage (I F
V
)
c
d
A
m
0
3
=
F
0.41
0.5
Vdc
Forward Voltage (I F
V
)
c
d
A
m
0
0
1
=
F
0.52
1.0
Vdc
Reverse Recovery Time
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)
trr
5.0
ns
I
)
C
D
(
t
n
e
r
r
u
C
d
r
a
w
r
o
F
F
200
mAdc
I
t
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r
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u
C
d
r
a
w
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o
F
k
a
e
P
e
v
i
t
i
t
e
p
e
R
FRM
300
mAdc
Non–Repetitive Peak Forward Current (t < 1.0 s)
IFSM
600
mAdc
Storage Temperature
T
-40 to +125
°C


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