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TB100 датащит (PDF) 5 Page - WeEn Semiconductors

№ деталь TB100
подробность  NPN power transistor
скачать  10 Pages
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производитель  WEEN [WeEn Semiconductors]
домашняя страница  http://www.ween-semi.com
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TB100 Datasheet(HTML) 5 Page - WeEn Semiconductors

 
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WeEn Semiconductors
TB100
NPN power transistor
TB100
All information provided in this document is subject to legal disclaimers.
© WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
30 September 2016
5 / 10
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VBE = 0 V; VCE = 700 V
-
0.8
100
µA
ICES
collector-emitter cut-off
current (base shorted) V
BE = 0 V; VCE = 700 V; Tj = 125 °C
-
2
500
µA
IEBO
emitter-base cut-off
current (collector open)
VEB = 9 V; IC = 0 A; Tlead = 25 °C
-
0.05
100
µA
VCEsat
collector-emitter
saturation voltage
IC = 0.75 A; IB = 0.15 A; Tlead = 25 °C;
Fig. 3
-
0.24
1
V
VBEsat
base-emitter saturation
voltage
IC = 0.75 A; IB = 0.15 A; Tlead = 25 °C;
Fig. 4
-
0.93
1.3
V
IC = 10 mA; VCE = 5 V; Tlead = 25 °C;
Fig. 5; Fig. 6
12
22
32
IC = 100 mA; VCE = 5 V; Tlead = 25 °C;
Fig. 5; Fig. 6
14
24
34
hFE
DC current gain
IC = 0.75 A; VCE = 5 V; Tlead = 25 °C;
Fig. 5; Fig. 6
12
15.5
20
Dynamic characteristics (resistive load)
ts
storage time
-
2
-
µs
tf
fall time
IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A;
RL = 75 Ω; VBB = -4 V; Tlead = 25 °C;
Fig. 7; Fig. 8
-
320
-
ns
IC (A)
10-2
10
1
10-1
aaa-010122
0.8
1.2
0.4
1.6
2.0
VCEsat
(V)
0
Tj = -35 °C
Tj = 125 °C
Tj = 25 °C
IC / IB = 5
Fig. 3. Collector-emitter saturation voltage as a function
of collector current; typical values
aaa-010121
0.8
0.4
1.2
1.6
VBEsat
(V)
0
IC (A)
10-2
10
1
10-1
1.0
0.6
0.2
1.4
Tj = 125 °C
Tj = -35 °C
Tj = 25 °C
IC / IB = 5
Fig. 4. Base-emitter saturation voltage as a function of
collector current; typical values


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