KMM53216004BKG datasheet(1/19 Pages) SAMSUNG

номер детали	KMM53216004BKG

подробное описание детали	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

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производитель	SAMSUNG [Samsung semiconductor]

домашняя страница	http://www.samsung.com/Products/Semiconductor

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DRAM MODULE

KMM53216004BK/BKG

KMM53216004BK/BKG EDO Mode

16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

The Samsung KMM53216004B is a 16Mx32bits

Dynamic

RAM

high

density

memory

module.

The

Samsung

KMM53216004B consists of eight CMOS 16Mx4bits DRAMs

in SOJ packages mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the

printed circuit board for each DRAM. The KMM53216004B is

a Single In-line Memory Module with edge connections and is

intended for mounting into 72 pin edge connector sockets.

• Part Identification

- KMM53216004BK(4K cycles/64ms Ref, SOJ, Solder)

- KMM53216004BKG(4K cycles/64ms Ref, SOJ, Gold)

• Extended Data Out Mode Operation

• CAS-before-RAS & Hidden Refresh capability

• RAS-only refresh capability

• TTL compatible inputs and outputs

• Single +5V

±10% power supply

• JEDEC standard PDpin & pinout

• PCB : Height(1250mil), double sided component

GENERAL DESCRIPTION

FEATURES

PERFORMANCE RANGE

Speed

tRAC

tCAC

tRC

tHPC

-5

50ns

13ns

84ns

20ns

-6

60ns

15ns

104ns

25ns

PIN NAMES

Pin Name

Function

A0 - A11

Address Inputs

DQ0-7, DQ9-16

DQ18-25, DQ27-34

Data In/Out

W

Read/Write Enable

RAS0, RAS2

Row Address Strobe

CAS0 - CAS3

Column Address Strobe

PD1 -PD4

Presence Detect

Vcc

Power(+5V)

Vss

Ground

NC

No Connection

PRESENCE DETECT PINS (Optional)

50NS

60NS

PD1

PD2

PD3

PD4

Vss

NC

Vss

NC

PIN CONFIGURATIONS

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

Symbol

VSS

DQ0

DQ18

DQ1

DQ19

DQ2

DQ20

DQ3

DQ21

Vcc

NC

A0

A1

A2

A3

A4

A5

A6

A10

DQ4

DQ22

DQ5

DQ23

DQ6

DQ24

DQ7

DQ25

A7

A11

Vcc

A8

A9

NC

RAS2

NC

37

38

39

40

41

42

43

44

45

46

47

48

49

50

51

52

53

54

55

56

57

58

59

60

61

62

63

64

65

66

67

68

69

70

71

72

Symbol

NC

Vss

CAS0

CAS2

CAS3

CAS1

RAS0

NC

W

NC

DQ9

DQ27

DQ10

DQ28

DQ11

DQ29

DQ12

DQ30

DQ13

DQ31

Vcc

DQ32

DQ14

DQ33

DQ15

DQ34

DQ16

NC

PD1

PD2

PD3

PD4

NC

Vss

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

Аналогичный номер детали - KMM53216004BKG

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	KMM53216004CK	445Kb / 21P	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
Samsung semiconductor	KMM53216004CKG	445Kb / 21P	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

More results

Аналогичное описание - KMM53216004BKG

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	KMM53216004CK	445Kb / 21P	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53216000CK	397Kb / 20P	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53216000BK	364Kb / 18P	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53616000BK	371Kb / 18P	16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
	KMM53232004CK	459Kb / 21P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53232004BK	420Kb / 19P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53232000CK	412Kb / 20P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53232000BK	376Kb / 18P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53616004CK	453Kb / 21P	16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
	KMM53616000CK	410Kb / 20P	16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V

More results

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