BAR63V-02V datasheet(2/4 Pages) VISHAY

номер детали	BAR63V-02V

подробное описание детали	RF PIN Diode - Single in SOD-523

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Document Number 85642

Rev. 1.5, 29-Jun-05

BAR63V-02V

Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics (Tamb = 25

°C unless otherwise specified)

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Reverse voltage

IR = 10 µAVR

50

V

Reverse current

VR = 35 V

IR

10

nA

Forward voltage

IF = 100 mA

VF

1.2

V

Diode capacitance

f = 1 MHz, VR = 0

CD

0.28

pF

f = 1 MHz, VR = 5 V

CD

0.23

0.3

pF

Forward resistance

f = 100 MHz, IF = 1 mA

rf

2.0

Ω

f = 100 MHz, IF = 5 mA

rf

1.1

2.0

Ω

f = 100 MHz, IF = 10 mA

rf

0.9

Ω

Charge carrier life time

IF = 10 mA, IR = 6 mA, iR = 3 mA

trr

115

ns

Figure 1. Forward Resistance vs. Forward Current

Figure 2. Diode Capacitance vs. Reverse Voltage

0

1

2

3

4

5

6

0.1

1.0

10

100

18341_1

f = 100 MHz

IF - Forward Current ( mA )

0.00

0.05

0.10

0.15

0.20

0.25

0.30

04

8

12

16

20

24

28

18333

VR - Reverse V oltage (V)

f=1MHz

Figure 3. Forward Current vs. Forward Voltage

Figure 4. Reverse Voltage vs. Reverse Current

0.01

0.10

1.00

10.00

100.00

0.5

0.6

0.7

0.8

0.9

1.0

VF - Forward Voltage(V)

18325

0

20

40

60

80

100

120

0.01

0.1

1.0

10

100

1000

IR - Reverse Current ( µA)

18329

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