поискавой системы для электроныых деталей |
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SI6991DQ-T1 датащи(PDF) 2 Page - Vishay Siliconix |
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SI6991DQ-T1 датащи(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si6991DQ Vishay Siliconix New Product www.vishay.com 2 Document Number: 72230 S-31066—Rev. A, 26-May-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 1.0 - 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = - 24 V, VGS = 0 V -1 mA Zero Gate Voltage Drain Current IDSS VDS = - 24 V, VGS = 0 V, TJ = 55_C -10 mA On-State Drain Currenta ID(on) VDS w -5 V, VGS = - 10 V -15 A Drain Source On State Resistancea r VGS = - 10 V, ID = - 4.2 A 0.032 0.040 W Drain-Source On-State Resistancea rDS(on) VGS = - 4.5 V, ID = - 3.2 A 0.054 0.068 W Forward Transconductancea gfs VDS = - 15 V, ID = - 4.2 A 13 S Diode Forward Voltagea VSD IS = - 1.0 A, VGS = 0 V - 0.76 - 1.2 V Dynamicb Total Gate Charge Qg 8 12 Gate-Source Charge Qgs VDS = - 15 V, VGS = - 4.5 V, ID = - 4.2 A 2.6 nC Gate-Drain Charge Qgd 3.7 Turn-On Delay Time td(on) 10 15 Rise Time tr VDD = - 15 V, RL = 15 W 10 15 Turn-Off Delay Time td(off) VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 45 70 ns Fall Time tf 27 40 Source-Drain Reverse Recovery Time trr IF = - 1.0 A, di/dt = 100 A/ms 30 50 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 6 12 18 24 30 0 1234 5 0 6 12 18 24 30 0 1234 5 VGS = 10 thru 5 V TC = - 55_C 125 _C 25 _C Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 4 V 3 V |
Аналогичный номер детали - SI6991DQ-T1 |
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Аналогичное описание - SI6991DQ-T1 |
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