поискавой системы для электроныых деталей |
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FDD6680AS датащи(PDF) 6 Page - Fairchild Semiconductor |
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FDD6680AS датащи(HTML) 6 Page - Fairchild Semiconductor |
6 / 8 page FDD6680AS Rev A (X) Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDD6680AS. Figure 12. FDD6680AS SyncFET body diode reverse recovery characteris For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDD6680). Schottky barrie diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.000001 0.00001 0.0001 0.001 0.01 0.1 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TA = 125 oC TA = 25 oC TA = 100 oC Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. Figure 13. Non-SyncFET (FDD6680) body diode reverse recovery characteristic. 10nS/div 10nS/div |
Аналогичный номер детали - FDD6680AS |
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Аналогичное описание - FDD6680AS |
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