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MMG3005NT1 датащит (PDF) 2 Page - NXP Semiconductors

№ деталь MMG3005NT1
подробность  Heterojunction Bipolar Transistor Technology (InGaP HBT)
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
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MMG3005NT1 Datasheet(HTML) 2 Page - NXP Semiconductors

 
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2
RF Device Data
Freescale Semiconductor
MMG3005NT1
Table 4. Electrical Characteristics (VDC = 5 Vdc, 2140 MHz, TA =25C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Gp
14
15
dB
Input Return Loss (S11)
IRL
--11
dB
Output Return Loss (S22)
ORL
--7
dB
Power Output @ 1dB Compression
P1dB
30
dBm
Third Order Output Intercept Point
OIP3
47
dBm
Noise Figure
NF
5
dB
Supply Current
IDC
420
480
520
mA
Supply Voltage
VDC
5
V
Table 5. Functional Pin Description
Name
Pin
Number
Description
RFin
3, 4
RF input for the power amplifier. This pin is DC--coupled and
requires a DC--blocking series capacitor.
RFout/
VCC
10, 11, 12
RF output for the power amplifier. This pin is DC--coupled
and requires a DC--blocking series capacitor.
VCC
14
Collector voltage supply.
VBA
16
Bias voltage supply.
GND
Backside
Center
Metal
The center metal base of the PQFN package provides both
DC and RF ground as well as heat sink contact for the
power amplifier.
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22--A114)
1A
Machine Model (per EIA/JESD 22--A115)
A
Charge Device Model (per JESD 22--C101)
IV
Table 7. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22--A113, IPC/JEDEC J--STD--020
3
260
C
RFout/VCC
RFout/VCC
Figure 1. Pin Connections
(Top View)
1
VBA
VCC
RFout/VCC
RFin
RFin
13
59
212
311
410
16
15
14
67
8
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.


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