BF1207 datasheet(9/22 Pages) PHILIPS

номер детали	BF1207

подробное описание детали	Dual N-channel dual gate MOSFET

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производитель	PHILIPS [NXP Semiconductors]

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9 / 22 page

9397 750 14955

Product data sheet

Rev. 01 — 28 July 2005

9 of 22

Philips Semiconductors

BF1207

Dual N-channel dual gate MOSFET

VDS(A) =VDS(B) =5V; VG1-S(B) =0V; fw = 50 MHz;

funw = 60 MHz; Tamb =25 °C; see Figure 29.

VDS(A) =VDS(B) =5V; VG1-S(B) = 0 V; f = 50 MHz;

see Figure 29.

Fig 9.

Ampliﬁer A: unwanted voltage for 1 %

cross-modulation as a function of gain

reduction; typical values

Fig 10. Ampliﬁer A: gain reduction as a function of

AGC voltage; typical values

VDS(A) =VDS(B) =5V; VG1-S(B) = 0 V; f = 50 MHz; Tamb =25 °C; see Figure 29.

Fig 11. Ampliﬁer A: drain current as a function of gain reduction; typical values

gain reduction (dB)

050

40

20

30

10

001aac887

100

90

110

120

Vunw

(dB

µV)

80

VAGC (V)

04

3

12

001aac888

30

20

40

10

0

gain

reduction

(dB)

50

gain reduction (dB)

050

40

20

30

10

001aac889

ID

(mA)

8

24

16

32

0

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