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SDM9433 датащи(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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SDM9433 датащи(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
2 / 9 page Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 12 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.5 - 1.2 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 20 µA VDS = 0 V, VGS = ± 4.5 V ± 0.5 Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 4.5 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 5.6 A 0.015 0.018 Ω VGS = - 2.5 V, ID = - 5.3 A 0.021 0.026 VGS = - 1.8 V, ID = - 2.5 A 0.040 0.065 Forward Transconductancea gfs VDS = - 10 V, ID = - 5.6 A 35 S Dynamicb Total Gate Charge Qg VDS = - 10 V, VGS = - 8 V, ID = - 5 A 50 75 nC Gate-Source Charge VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A 20 30 Qgs 3.3 Gate-Drain Charge Qgd 8.4 Gate Resistance Rg f = 1 MHz 0.2 1 2 k Ω Turn-On Delay Time td(on) VDD = - 10 V, RL = 1 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω 0.71 1.1 us Rise Time tr 1.7 2.6 Turn-Off Delay Time td(off) 69 Fall Time tf 3.2 5 Turn-On Delay Time td(on) VDD = - 10 V, RL = 1 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 0.3 0.45 Rise Time tr 0.6 0.9 Turn-Off Delay Time td(off) 10 15 Fall Time tf 3.5 5.5 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 6 A Pulse Diode Forward Current ISM - 50 Body Diode Voltage VSD IS = - 5 A, VGS = 0 V - 0.85 - 1.2 V Body Diode Reverse Recovery Time trr IF = 6 A, dI/dt = 100 A/µs, TJ = 25 °C 30 60 ns Body Diode Reverse Recovery Charge Qrr 20 40 nC Reverse Recovery Fall Time ta 13 ns Reverse Recovery Rise Time tb 17 www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 SDM9433 2 |
Аналогичный номер детали - SDM9433 |
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Аналогичное описание - SDM9433 |
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