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FM5822-AN датащи(PDF) 1 Page - Formosa MS

номер детали FM5822-AN
подробное описание детали  Chip Schottky Barrier Diodes - Silicon epitaxial planer type
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производитель  FORMOSA [Formosa MS]
домашняя страница  http://www.formosams.com
Logo FORMOSA - Formosa MS

FM5822-AN датащи(HTML) 1 Page - Formosa MS

  FM5822-AN Datasheet HTML 1Page - Formosa MS FM5822-AN Datasheet HTML 2Page - Formosa MS  
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FM5820-AN THRU FM5822-AN
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.15 gr am
(V)
(V)
(V)
(V)
(
oC)
FM5820-AN
SK32
20
14
20
0.475
FM5821-AN
SK33
30
21
30
0.500
FM5822-AN
SK34
40
28
40
0.525
SYMBOLS
MARKING
CODE
-55 to +125
Storage
temperature
VRRM
*1
VRMS
*2
VR
*3
VF
*4
MAXIMUM RATINGS (AT TA=25
oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
IO
3.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
80
A
VR = VRRM TA =
25
oC
2.0
mA
VR = VRRM TA = 125
oC
20
mA
Thermal resistance
Junction to ambient
RqJA
80
oC / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
250
pF
Operating temperature
TSTG
-55
+150
oC
Reverse current
IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.185(4.8)
0.173(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.067(1.7)
0.053(1.3)
0.060(1.5)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA-N
0.067(1.7)


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