поискавой системы для электроныых деталей |
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TLE8110ED датащи(PDF) 23 Page - Infineon Technologies AG |
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TLE8110ED датащи(HTML) 23 Page - Infineon Technologies AG |
23 / 74 page Data Sheet 23 Rev. 1.0 2018-03-07 TLE8110ED Smart Multichannel Low Side Switch with Parallel Control and SPI Interface Power Outputs Figure 11 CH 1-4: typical behavior of RDS_ON versus the junction temperature Tj Figure 12 CH5-6: typical behavior of RDS_ON versus the junction temperature Tj 3) This lifetime statement is an anticipation based on an extrapolation of Infineon's qualification test results. The actual lifetime of a component depends on its form of application and type of use etc. and may deviate from such statement. The lifetime statement shall in no event extend the agreed warranty period. 4) Triangular Pulse Shape (inductance discharge): ID(t) = ID(0)·(1 - t / tpulse); 0 < t < tpulse. 5) Repetitive operation not allowed. Starting Tj must be kept within specs. In case of high energy pulse an immediate switch-off strategy is recommended. -40 -20 0 20406080 100 120 140 0,2 0,3 0,4 0,5 0,6 Tj/°C RDS_ON / Ohm RON_vs_Tj_CH1-4,6.vsd R DS_ON vs. Tj: CH 1-4 (V DD=5V) -40 -20 0 20406080 100 120 140 0,1 0,2 0,3 0,4 0,5 Tj/°C RDS_ON / Ohm RON_vs_Tj_CH5-6.vsd RDS_ON vs. Tj: CH 5-6 (VDD=5V) |
Аналогичный номер детали - TLE8110ED |
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Аналогичное описание - TLE8110ED |
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