поискавой системы для электроныых деталей |
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MJD122I датащи(PDF) 1 Page - First Silicon Co., Ltd |
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MJD122I датащи(HTML) 1 Page - First Silicon Co., Ltd |
1 / 2 page 2012. 10. 14 1/2 Revision No : 0 SEMICONDUCTOR TECHNICAL DATA MJD122I MJD122I FEATURES ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) e u l a V r e t e m a r a P l o b m y S Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO V 5 e g a t l o V e s a B - r e t t i m E IC Collector Current -Continuous 8 A PC W 5 . 1 n o i t a p i s s i D r o t c e ll o C TJ, Tstg Junction and Storage Te 0 5 1 - 5 5 - e r u t a r e p m ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO Ic= 1mA,IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO Ic= 30mA,IB=0 100 V Emitter-base breakdown voltage V(BR)EBO IE=3mA,IC=0 5 V Collector cut-off current ICBO VCB=100V,IE=0 10 µA Collector-emitter cut-off current ICEO VCE=50V,IE=0 10 µA Emitter cut-off current IEBO VEB=5V,IC=0 2 mA hFE(2) VCE=4V,IC=4A 1000 12000 DC current gain hFE(3) VCE=4V,IC=8A 100 VCE(sat)(1) IC=4A,IB=16mA 2 V Collector-emitter saturation voltage VCE(sat)(2) IC=8A,IB=80mA 4 V Base-emitter saturation voltage VBE(sat) IC=8A,IB=80mA 4.5 V Base-emitter voltage* VBE VCE=4V,IC=4A 2.8 V Collector output capacitance Cob VCB=10V,IE=0,f=0.1MHz 200 pF TO-251-3L 1. BASE 2. COLLECTOR 3. EMITTER ℃ NPN Silicon Darlington Transistor Equivalent Circuit B E C R1 R2 R1 8k Ω ≅ R2 0.12k Ω ≅ We declare that the material of product compliance with RoHS requirements. |
Аналогичный номер детали - MJD122I |
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Аналогичное описание - MJD122I |
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