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TIP112 датащит (PDF) 1 Page - First Silicon Co., Ltd

№ деталь TIP112
подробность  DARLINGTON TRANSISTOR (NPN)
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производитель  FS [First Silicon Co., Ltd]
домашняя страница  http://www.firstsilicon.co.kr/
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TIP112 Datasheet(HTML) 1 Page - First Silicon Co., Ltd

   
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2013. 10. 14
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Revision No : 0
SEMICONDUCTOR
TECHNICAL DATA
TIP112
DIM
MILLIMETERS
TO-220
A
B
C
D
E
F
H
J
N
O
0.8 ± 0.1
2.7 ± 0.2
2.54 ± 0.2
13.6 ± 0.2
3.8 ± 0.2
10.15 ± 0.15
4.5 ± 0.2
2.7 ± 0.2
15.30 MAX
1.3 0.1/-0.15
0.4 ± 0.15
A
F
B
J
E
O
C
H
N
N
D
P
P
1 BASE
2 COLLECTOR
3 EMITTER
1 2 3
TIP112
DARLINGTON TRANSISTOR (NPN)
FEATURES
High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
Low Collector-Emitter Saturation Voltage
Industrial Use
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
2
A
PC
Collector Power Dissipation
2
W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55 to +150
ELECTRICAL
CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10mA,IE
0
0
1
0
=
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=30mA,IB=0
(SUS)
100
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10mA,IC
5
0
=
V
Collector cut-off current
ICEO
VCE=50V,IB 0
=
2
mA
Collector cut-off current
ICBO
VCB=100V,IE 0
=
1
mA
Emitter cut-off current
IEBO
VEB=5V,IC 0
=
2
mA
hFE(1)
VCE=4V,IC=1A
1000
DC current gain
hFE(2)
VCE=4V,IC=2A
500
Collector-emitter saturation voltage
VCE(sat)
IC=2A,IB
A
m
8
=
2.5
V
Base-emitter voltage
VBE
VCE=4V,IC
A
2
=
2.8
V
Collector output capacitance
Cob
VCB=10V,IE=0,f=0.1MHz
100
pF


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