1

Motorola Bipolar Power Transistor Device Data

High-Current Complementary

Silicon Transistors

. . . for use as output devices in complementary general purpose amplifier applica-

tions.

• High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc

• Monolithic Construction with Built–in Base Emitter Shunt Resistor

• Junction Temperature to +200_C

MAXIMUM RATINGS

Rating

Symbol

MJ11012

MJ11013

MJ11014

MJ11015

MJ11016

Unit

Collector–Emitter Voltage

VCEO

60

90

120

Vdc

Collector–Base Voltage

VCB

60

90

120

Vdc

Emitter–Base Voltage

VEB

5

Vdc

Collector Current

IC

30

Adc

Base Current

IB

1

Adc

Total Device Dissipation @TC = 25_C

Derate above 25

_C @ TC = 100_C

PD

200

1.15

Watts

W/

_C

Operating Storage Junction

Temperature Range

TJ, Tstg

– 55 to + 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.87

_C/W

Maximum Lead Temperature for

Soldering Purposes for

v 10 Seconds.

TL

275

_C

Figure 1. Darlington Circuit Schematic

BASE

EMITTER

COLLECTOR

≈ 8.0 k

≈ 40

PNP

MJ11013

MJ11015

BASE

EMITTER

COLLECTOR

≈ 8.0 k

≈ 40

NPN

MJ11012

MJ11014

MJ11016

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ11012/D

MJ11013

MJ11015

MJ11012

MJ11014

MJ11016

30 AMPERE

DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60 – 120 VOLTS

200 WATTS

*Motorola Preferred Device

PNP

NPN

*

CASE 1–07

TO–204AA

(TO–3)

REV 1