MJE5730 datasheet(4/6 Pages) ONSEMI

номер детали	MJE5730

подробное описание детали	POWER TRANSISTORS PNP SILICON

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MJE5730 MJE5731 MJE5731A

4

Motorola Bipolar Power Transistor Device Data

t2

Figure 7. Switching Time Equivalent Circuit

TURN–ON PULSE

VBE(off)

Vin

APPROX

.

–11 V

0 V

t3

TURN–OFF PULSE

t1 ≤ 7.0 ns

100

≤ t2 < 500 µs

t3 < 15 ns

APPROX. + 9.0 V

DUTY CYCLE

≈ 2.0%

VCC

Vin

RC

RB

SCOPE

+ 4.0 V

Cjd << Ceb

51

t1

0.02

0.2

2.0

0.1

0.05

0.5

1.0

5.0

IC, COLLECTOR CURRENT (AMPS)

TJ = 25°C

VCC = 200 V

IC/IB = 5.0

2.0

1.0

0.5

0.2

0.1

0.05

Figure 8. Turn–On Resistive Switching Times

Figure 9. Resistive Turn–Off Switching Times

IC, COLLECTOR CURRENT (AMPS)

0.01

1.0

0.5

0.1

0.05

0.02

0.2

2.0

0.1

0.05

0.5

1.0

tr

td

ts

tf

TJ = 25°C

VCC = 200 V

IC/IB = 5.0

0.2

0.03

0.3

0.03

0.3

3.0

0.03

0.3

INPUT

50

VBB1 = 10 V

RBB2 =

100

Ω

TUT

VCE MONITOR

100 mH

VCC = 20 V

+

–

RBB1 =

150

Ω

IC MONITOR

RS =

0.1

Ω

VBB2 =

0

+

–

Test Circuit

Voltage and Current Waveforms

INPUT

VOLTAGE

COLLECTOR

CURRENT

COLLECTOR

VOLTAGE

VCE(sat)

10 V

VCER

0 V

0.63 A

–5 V

0 V

100 ms

tw ≈ 3 ms

(SEE NOTE 1)

Figure 10. Inductive Load Switching

MJE171

Аналогичный номер детали - MJE5730

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	MJE5730	190Kb / 6P	1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS
ON Semiconductor	MJE5730	82Kb / 5P	High Voltage PNP Silicon Plastic Power Transistors February, 2006 ??Rev. 5
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