NXP Semiconductors

TEA2095TE

GreenChip dual synchronous rectifier controller

TEA2095TE

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2020. All rights reserved.

Product data sheet

Rev. 1.1 — 10 April 2020

13 / 19

13 Application information

A resonant switched mode power supply with the TEA2095TE consists of a primary

side half-bridge, a transformer, a resonant capacitor, and an output stage. To obtain

low conduction loss rectification, SR MOSFETs are used in the output stage. The

TEA2095TE controls these SR MOSFETs.

The gate drive voltage for the SR switch is derived from the voltage difference between

the corresponding drain sense and source sense pins.

Special attention must be paid to the connection of the drain sense and source sense

pins. The voltages measured on these pins are used for gate drive voltage. Wrong

measurement results in a less efficient gate drive because the gate voltage is either

too low or too high. The connections to these pins must not interfere with the power

wiring. The power wiring conducts currents with high dI/dt values. It can easily cause

measurement errors resulting from induced voltages due to parasitic inductances.

The separate source-sense pins enable the direct sensing of the source voltage of the

external MOSFETs. Using the current carrying power ground tracks is not allowed.

13.1 Application diagram resonant application

aaa-016991

DSA

GDA

SSA

DSB

GDB

SSB

GND

Qprim1

CHB

Qprim2

Qsec1

PRIMARY

SIDE

CONTROLLER

IC

TR

IC1

Qsec2

Cout

Figure 6. Typical resonant application with TEA2095TE