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WSD3020DN датащит (PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

№ деталь WSD3020DN
подробность  Dual N-Ch MOSFET
скачать  5 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
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WSD3020DN Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.0232
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=
7.5A
---
1
7
19
m
Ω
VGS=4.5V , ID=
6.8A
---
20
25
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.
0
1.
5
2.5
V
VGS(th)
VGS(th) Temperature Coefficient
---
-5.08
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=24V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=24V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=
7.5A
---
22
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.2
3.0
Ω
Qg
Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=
7.5A
---
5.9
8
nC
Qgs
Gate-Source Charge
---
2.1
2.9
Qgd
Gate-Drain Charge
---
2.0
3.2
Td(on)
Turn-On Delay Time
VDD=15V , VGEN=10V , RG=6Ω
ID=1A
,RL=15Ω
---
14
19
ns
Tr
Rise Time
---
10
17
Td(off)
Turn-Off Delay Time
---
20
62
Tf
Fall Time
---
8
12
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
526
pF
Coss
Output Capacitance
---
76
Crss
Reverse Transfer Capacitance
---
62
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=
7.5A
15
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
21
A
ISM
Pulsed Source Current
2,6
---
---
25
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=
7.5A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time
IF=7.5A
,dI/dt=100A/µs,TJ=25℃
---
12
---
nS
Qrr
Reverse Recovery Charge
---
3
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=
7.5A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Guaranteed Avalanche Characteristics
Diode Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSD3020DN
Page 2
www.winsok.tw
Dec.2014
Dual N-Ch MOSFET
---
---
---


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