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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DRV8353M датащи(PDF) 13 Page - Texas Instruments |
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DRV8353M датащи(HTML) 13 Page - Texas Instruments |
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13 / 76 page  at TA = –55°C to +125°C, VVM = 9 to 75 V, VVDRAIN = 9 to 100 V, VVIN = 48 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VBIAS SOx output voltage bias SPI Device VSP = VSN = 0 V, VREF_DIV = 0b VVREF – 0.3 V SPI Device VSP = VSN = 0 V, VREF_DIV = 1b VVREF / 2 H/W Device VSP = VSN = 0 V VVREF / 2 IBIAS SPx/SNx input bias current 250 µA VSLEW SOx output slew rate 60-pF load 10 V/µs IVREF VREF input current VVREF = 5 V 1.5 2.5 mA UGB Unity gain bandwidth DRV835x: 60-pF load 10 MHz PROTECTION CIRCUITS VVM_UV VM undervoltage lockout DRV835x: VM falling, UVLO report 8.0 8.3 8.8 V DRV835x: VM rising, UVLO recovery 8.2 8.5 9.0 VVM_UVH VM undervoltage hysteresis Rising to falling threshold 200 mV tVM_UVD VM undervoltage deglitch time VM falling, UVLO report 10 us VVDR_UV VDRAIN undervoltage lockout DRV835x: VDRAIN falling, UVLO report 6.1 6.4 6.8 V DRV835x: VDRAIN rising, UVLO recovery 6.3 6.6 7.0 VVDR_UVH VDRAIN undervoltage hysteresis Rising to falling threshold 150 mV tVDR_UVD VDRAIN undervoltage deglitch time VDRAIN falling, UVLO report 10 us VVCP_UV VCP charge pump undervoltage lockout VCP falling, GDUV report VDRAIN + 5 V VVGLS_UV VGLS low-side regulator undervoltage lockout VGLS falling, GDUV report 4.25 V VGS_CLAMP High-side gate clamp Positive clamping voltage 12.5 13.5 16 V Negative clamping voltage –0.7 VVDS_OCP VDS overcurrent trip voltage SPI Device VDS_LVL = 0000b 0.041 0.06 0.082 V VDS_LVL = 0001b 0.051 0.07 0.094 VDS_LVL = 0010b 0.061 0.08 0.106 VDS_LVL = 0011b 0.071 0.09 0.118 VDS_LVL = 0100b 0.081 0.1 0.125 VDS_LVL = 0101b 0.18 0.2 0.24 VDS_LVL = 0110b 0.27 0.3 0.345 VDS_LVL = 0111b 0.36 0.4 0.455 VDS_LVL = 1000b 0.45 0.5 0.565 VDS_LVL = 1001b 0.54 0.6 0.67 VDS_LVL = 1010b 0.63 0.7 0.78 VDS_LVL = 1011b 0.72 0.8 0.885 VDS_LVL = 1100b 0.81 0.9 1.0 VDS_LVL = 1101b 0.9 1.0 1.1 VDS_LVL = 1110b 1.35 1.5 1.65 VDS_LVL = 1111b 1.8 2 2.2 V H/W Device VDS = 75 kΩ ± 5% tied to GND 0.18 0.2 0.24 V VDS = Hi-Z 0.36 0.4 0.455 VDS = 75 kΩ ± 5% tied to DVDD 0.63 0.7 0.78 VDS = 18 kΩ ± 5% tied to DVDD 0.9 1 1.1 VVDS_OCP VDS overcurrent trip voltage VDS = Tied to DVDD Disabled www.ti.com DRV8353M SLVSFO2 – JULY 2020 Copyright © 2020 Texas Instruments Incorporated Submit Document Feedback 13 Product Folder Links: DRV8353M |
Аналогичный номер детали - DRV8353M |
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Аналогичное описание - DRV8353M |
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