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WSD8823DN22 датащит (PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

№ деталь WSD8823DN22
подробность  P-Ch MOSFET
скачать  6 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
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WSD8823DN22 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-20
---
---
V
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.01
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V , ID=-
1A
---
m
Ω
VGS=-2.5V , ID=-
1A
---
75
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-0.
5
-0.7
-
1.2
V
VGS(th)
VGS(th) Temperature Coefficient
---
3.13
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-16V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-16V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-
1A
---
16
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2
---
Ω
Qg
Total Gate Charge (-4.5V)
VDS=-1
0V , VGS=-4.5V , ID=-1A
---
5.2
---
nC
Qgs
Gate-Source Charge
---
0.7
---
Qgd
Gate-Drain Charge
---
1.8
---
Td(on)
Turn-On Delay Time
VDD=-
10V , VGS=-4.5V ,
RG=
6Ω ID=-1A,
---
20
---
ns
Tr
Rise Time
---
18
---
Td(off)
Turn-Off Delay Time
---
300
---
Tf
Fall Time
---
120
---
Ciss
Input Capacitance
VDS=-
10V , VGS=0V , f=1MHz
---
420
---
pF
Coss
Output Capacitance
---
180
---
Crss
Reverse Transfer Capacitance
---
90
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper
, t≦10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
60
120
99
WSD8823DN22
Page 2
www.winsok.tw
Dec.2014
P-Ch MOSFET
VGS=-
1.8V , ID=-1A
---
105
180
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VF
Forard Voltage Drop
IF=1A
---
0.41
0.45
V
IR
Maximum reverse leakage current
---
15
200
Schottky Diode
VR=20V
uA


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