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WSD30150DN56 датащит (PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

№ деталь WSD30150DN56
подробность  N-Ch MOSFET
скачать  5 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
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WSD30150DN56 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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background image
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Sou
rce Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
1,7
150
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
1,7
83
A
IDM
Pulsed Drain Current
2
200
A
EAS
Single Pulse Avalanche Energy
3
125
mJ
IAS
Avalanche Current
50
A
PD@TC=25℃
Total Power Dissipation
4
62.5
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction-Ambient
1
---
30
/W
RθJC
Thermal Resistance Junction-Case
1
---
2
/W
BVDSS
RDSON
ID
30V
1.
8mΩ
150A
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
General Description
Features
Applications
High Frequency Point-of-Load Synchronous
Buck Converter
Networking DC-DC Power System
Power Tool Application
Absolute Maximum Ratings
Thermal Data
DFN5X6-8 Pin Configuration
Product Summery
N-Ch MOSFET
Page 1
www.winsok.tw
Dec.2014
The WSD30150DN56 is the highest performance trench
N-Ch MOSFET with extreme high celldensity ,which
provide excellent RDSON and gate charge for most of
the synchronous buck converter applications .
The WSD30150DN56 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
WSD30150DN56


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