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WSD30150DN56 датащит (PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

№ деталь WSD30150DN56
подробность  N-Ch MOSFET
скачать  5 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
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WSD30150DN56 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.02
---
V/℃
VGS=10V , ID=
20A
---
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=
4.5V , ID=15A
m
Ω
VGS(th)
Gate Threshold Voltage
1
.4
1.
7
2.5
V
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =250uA
---
-6.1
---
mV/℃
VDS=24V , VGS=0V , TJ=25℃
---
---
1
IDSS
Drain-Source Leakage Current
VDS=24V , VGS=0V , TJ=55℃
---
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=
10A
---
27
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
0.8
1.5
Ω
Qg
Total Gate Charge (4.5V)
---
26
---
Qgs
Gate-Source Charge
---
9.5
---
Qgd
Gate-Drain Charge
VDS=15V , VGS=4.5V , ID=
30A
---
11.4
---
nC
Td(on)
Turn-On Delay Time
---
20
---
Tr
Rise Time
---
12
---
Td(off)
Turn-Off Delay Time
---
69
---
Tf
Fall Time
VDD=15V , VGEN=10V , RG=6Ω,
ID=1A
, RL=15Ω.
---
29
---
ns
Ciss
Input Capacitance
3200
Coss
Output Capacitance
680
Crss
Reverse Transfer Capacitance
VDS=15V , VGS=0V , f=1MHz
320
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.
1mH , IAS=30A
98
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
---
---
30
A
ISM
Pulsed Source Current
2,6
VG=VD=0V , Force Current
---
---
200
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=A , TJ=25℃
---
---
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=
30A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
7.Package limitation current is 1
00A.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
N-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
1.
8
2.4
2.4
3.2
WSD30150DN56
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