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WSE3099 датащит (PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

№ деталь WSE3099
подробность  P-Ch MOSFET
скачать  5 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
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WSE3099 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Sou
rce Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, -VGS @ -10V
1
-
5.0
A
ID@TC=100℃
Continuous Drain Current, -VGS @ -10V
1
-
4.0
A
IDM
Pulsed Drain Current
2
-
20
A
EAS
Single Pulse Avalanche Energy
3
18
mJ
IAS
Avalanche Current
8
A
PD@TC=25℃
Total Power Dissipation
4
1.8
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction-Ambient
1
---
62.5
/W
RθJC
Thermal Resistance Junction-Case
1
---
30
/W
BVDSS
RDSON
ID
-30V
53mΩ
-
5.0A
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
Green Device Available
General Description
Features
Applications
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
Absolute Maximum Ratings
Thermal Data
SOT
-89 Pin Configuration
Product Summery
The WSP3099 is the highest performance trench
P-Ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The WSP3099 meet the RoHS and Green Product
requirement with full function reliability approved.
WSE3099
P-Ch MOSFET
Page 1
www.winsok.tw
Dec.2014


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