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WSE3099 датащит (PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

№ деталь WSE3099
подробность  P-Ch MOSFET
скачать  5 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
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WSE3099 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-30
---
---
V
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.02
---
V/℃
VGS=-10V , ID=-
5.0A
---
5
3
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V , ID=-
3.8A
---
m
Ω
VGS(th)
Gate Threshold Voltage
-1.0
-1.5
-2.
0
V
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =-250uA
---
4.32
---
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
---
---
-1
IDSS
Drain-Source Leakage Current
VDS=-24V , VGS=0V , TJ=55℃
---
---
-5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-3A
---
5.5
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
24
48
Ω
Qg
Total Gate Charge (-4.5V)
---
11.6
---
Qgs
Gate-Source Charge
---
1.3
---
Qgd
Gate-Drain Charge
VDS=-
15V , VGS=-4.5V , ID=-5A
---
2.5
---
nC
Td(on)
Turn-On Delay Time
---
6
12
Tr
Rise Time
---
12
23
Td(off)
Turn-Off Delay Time
---
25
46
Tf
Fall Time
VDD=-15V
,VGEN=-10V,RG=3.3Ω
ID=-1A
,RL=15Ω
---
6
12
ns
Ciss
Input Capacitance
---
625
---
Coss
Output Capacitance
---
100
---
Crss
Reverse Transfer Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
60
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=6A
6
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
---
---
-
2.0
A
ISM
Pulsed Source Current
2,6
VG=VD=0V , Force Current
---
---
-
20
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-
1.7A , TJ=25℃
---
---
-1
V
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Guaranteed Avalanche Characteristics
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-
6A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
WSE3099
P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
80
65
98


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