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WSE9968 датащит (PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

№ деталь WSE9968
подробность  N-Ch MOSFET
скачать  5 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
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WSE9968 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Sou
rce Voltage
±
20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V
1
4.2
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V
1
3.4
A
IDM
Pulsed Drain Current
2
16
A
EAS
Single Pulse Avalanche Energy
3
12
mJ
IAS
Avalanche Current
7.0
A
PD@TA=25℃
Total Power Dissipation
3
3.5
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction-ambient
1
---
85
/W
RθJC
Thermal Resistance Junction-Case
1
---
35
/W
BVDSS
RDSON
ID
100V
80mΩ
4.2A
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
General Description
Features
Applications
High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
Absolute Maximum Ratings
Thermal Data
SOT-89 Pin Configuration
Product Summery
N-Ch MOSFET
WSE9968
Page 1
www.winsok.tw
Dec.2014
The WSE9968 is the highest performance trench
N-Ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The WSE9968 meet the RoHS and Green Pro
duct requirement , 100% EAS guaranteed with full
function reliability approved.


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