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WSF12N10 датащит (PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

№ деталь WSF12N10
подробность  N-Ch MOSFET
скачать  6 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
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WSF12N10 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.098
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=
5A
---
175
220
m
Ω
VGS=4.5V , ID=
2A
---
220
310
m
Ω
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.0
1.8
2.
4
V
VGS(th)
VGS(th) Temperature Coefficient
---
-4.57
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=80V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=
5A
---
13
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2
4
Ω
Qg
Total Gate Charge (10V)
VDS=
50V , VGS=10V , ID=5A
6.0
9.5
13
nC
Qgs
Gate-Source Charge
1.3
1.9
2.5
Qgd
Gate-Drain Charge
1.0
2.1
3.1
Td(on)
Turn-On Delay Time
VDD=
30V , VGS=10V , RG=6Ω
ID=1A
, RL=30Ω
---
11
21
ns
Tr
Rise Time
---
10
19
Td(off)
Turn-Off Delay Time
---
21
39
Tf
Fall Time
---
13
24
Ciss
Input Capacitance
VDS=
30V , VGS=0V , f=1MHz
440
pF
Coss
Output Capacitance
36
Crss
Reverse Transfer Capacitance
20
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.
5mH , IAS=3A
10
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
3
A
ISM
Pulsed Source Current
2,6
---
---
9
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=
3A , TJ=25℃
---
---
1.
1
V
trr
Reverse Recovery Time
IF=
5A , dI/dt=100A/µs , TJ=25℃
25
36
47
nS
Qrr
Reverse Recovery Charge
34
49
64
nC
Diode Characteristics
Guaranteed Avalanche Characteristics
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper
,t≦10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.
5mH,IAS=3A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
N-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
WSF12N10
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