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WSF15N10G датащит (PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

№ деталь WSF15N10G
подробность  N-Ch MOSFET
скачать  6 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
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WSF15N10G Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Sou
rce Voltage
±
20
V
ID
Continuous Drain Current1)
15
A
Pulsed Drain Current2)
45
A
EAS
Single Pulse Avalanche Energy4)
5.5
mJ
PD
Total Power Dissipation
3
)
36
W
TSTG
Storage Temperature Range
-55 to 1
50
TJ
Operating Junction Temperature Range
-55 to 1
50
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction-ambient 5)
---
62
/W
RθJC
Thermal Resistance Junction-Case
---
3.5
/W
BVDSS
RDSON
ID
100V
75mΩ
1
5A
General Description
Features
Applications
Absolute Maximum Ratings at Tj=25℃ unless otherwise noted
Thermal Data
TO-252 Pin Configuration
Product Summery
Fast Switching
DC-DC Power System
Load Switch
The WSF15N10G uses advanced SGTMOS
technology to provide low RDS(ON), low gate
charge, fast switching and excellent avalanche
characteristics. This device is specially designed
to get better ruggedness and suitable to use in
Synchronous rectification applications
N-Ch MOSFET
Page 1
www.winsok.tw
Dec.2014
WSF15N10G
ID, pulse
advanced SGTMOS technology
Low gate charge
Low RDS(ON)


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