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WSF15N10G датащит (PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

№ деталь WSF15N10G
подробность  N-Ch MOSFET
скачать  6 Pages
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производитель  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
домашняя страница  http://www.winsok.tw/index.html
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WSF15N10G Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.098
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=
5A
---
50
75
m
Ω
VGS=4.5V , ID=
2A
---
60
90
m
Ω
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
2.0
2.7
V
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=80V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
28.8
Ω
Qg
Total Gate Charge (10V)
6.5
nC
Qgs
Gate-Source Charge
1.4
Qgd
Gate-Drain Charge
1.4
Td(on)
Turn-On Delay Time
---
14
ns
Tr
Rise Time
---
3.2
Td(off)
Turn-Off Delay Time
---
36
Tf
Fall Time
---
14
Ciss
Input Capacitance
410
pF
Coss
Output Capacitance
80
Crss
Reverse Transfer Capacitance
50
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
VG=VD=0V , Force Current
---
---
15
A
---
---
45
A
VSD
Diode Forward Voltage
2
)
VGS=0V , IS=
5A , TJ=25℃
---
---
1.
3
V
trr
Reverse Recovery Time
IF=
5A ,
dI/dt=100A/µs , TJ=25℃
36
nS
Qrr
Reverse Recovery Charge
37
nC
Diode Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
N-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
WSF15N10G
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
VGS=0 V,
VDS=25 V,
ƒ=100 KHz
VGS=10 V,
VDS=50 V,
RG=2 Ω,
ID=5 A
VGS=10 V ,
VDS=50 V,
ID=5 A
1)
Calculated continuous current based on maximum allowable junction temperature.
2)
Repetitive rating; pulse width limited by max. junction temperature.
3)
Pd is based on max. junction temperature, using junction-case thermal resistance.
4)
VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 °C.
5)
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with Ta=25 °C.
---
---
---
---
ISP
Pulsed diode current2)
Continuous diode current1)


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