поискавой системы для электроныых деталей |
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IRFP460 датащи(PDF) 1 Page - IXYS Corporation |
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IRFP460 датащи(HTML) 1 Page - IXYS Corporation |
1 / 4 page 1 - 4 © 2000 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 500 V V DGR T J = 25 °C to 150°C; R GS = 1 MΩ 500 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C20 A I DM T C = 25°C, pulse width limited by TJM 80 A I AR 20 A E AR T C = 25°C28 mJ dv/dt I S ≤ I DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 3.5 V/ns T J ≤ 150°C, RG = 2 Ω P D T C = 25°C 260 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C M d Mounting torque 1.15/10 Nm/lb.in. Weight 6g Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s TO-247 AD N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, I D = 250 µA 500 V V GS(th) V DS = V GS, ID = 250 µA2 4 V I GSS V GS = ±20 V DC, VDS = 0 ±100 nA I DSS V DS = 0.8 • V DSS T J = 25°C25 µA V GS = 0 V T J = 125°C 250 µA R DS(on) V GS = 10 V, I D = 12 A 0.25 0.27 Ω Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % MegaMOSTM IRFP 460 V DSS = 500 V Power MOSFET I D(cont) = 20 A R DS(on) = 0.27 Ω Ω Ω Ω Ω G = Gate, D = Drain, S = Source, TAB = Drain Features l Repetitive avalanche energy rated l Fast switching times l Low R DS (on) HDMOS TM process l Rugged polysilicon gate cell structure l High Commutating dv/dt Rating Applications l Switching Power Supplies l Motor controls 92825D (5/98) D (TAB) IXYS reserves the right to change limits, test conditions, and dimensions. |
Аналогичный номер детали - IRFP460 |
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Аналогичное описание - IRFP460 |
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