DL-100-7-KERSMD datasheet(1/2 Pages) ETC1

номер детали	DL-100-7-KERSMD

подробное описание детали	Position Sensing Photodiodes Special characteristics

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Position Sensing

Photodiodes

Special characteristics:

dual-axis, duo-lateral PSD

active area 10 x 10 mm

high position resolution and

high linearity

CATHODE 1

21.0 ± 0.2

ANODE 2

ANODE 1

CATHODE 2

1.6

Chip: DL-100-7

Active area:

(10 x 10) mm

2

DL-100-7-KER SMD

Parameters:

DL-100-7-KER SMD

active area

10 x 10 mm

100 mm

2

Dark current

at 10 V

max. 300 nA

typ. 80 nA

Capacitance

at 10 V, 100 kHz

typ. 75 pF

Spectral responsivity

at 633 nm

at 850 nm

typ. 0,4 A/W

typ. 0,62 A/W

Interelectrode resistance

at E = 0 lx

typ. 12 k

Ω

Rise time

at 10 V, 50

Ω, 865 nm

typ. 4 µs

Noise limited resolution

at 632 nm, 0.5 µW

0.2 µm

Position Detection Error

1)

at 632 nm

+/- 1%

Breakdown voltage

typ. 30 V

Package

Ceramic S.M.

Operating temperature

Storage temperature

-20 ... +70°C

-60 ... +100°C

1) measurement conditions:

Spot size: 0,5 mm,

Scan Interval: 1 mm

Wavelength: 633 nm

Package 22 (SMD)

www.silicon-sensor.com

www.pacific-sensor.com

Version: 02-09-06

10.16

15.24

(2.54)

1.6

SMD - Kontaktrückseite

SMD - back contact

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DL-100-7-KERSMD датащи(PDF) 1 Page - List of Unclassifed Manufacturers

DL-100-7-KERSMD датащи(HTML) 1 Page - List of Unclassifed Manufacturers

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