поискавой системы для электроныых деталей |
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VMO400-02F датащи(PDF) 2 Page - IXYS Corporation |
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VMO400-02F датащи(HTML) 2 Page - IXYS Corporation |
2 / 4 page IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 VMO 400-02F Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs V DS = 10 V; ID = 0.5 • ID25 pulsed 380 S C iss 53 nF C oss V GS = 0 V, VDS = 25 V, f = 1 MHz 9.6 nF C rss 3.4 nF t d(on) 210 ns t r V GS = 10 V, V DS = 0.5 • VDSS , ID = 0.5 • ID25 500 ns t d(off) R G = 1 Ω (External) 900 ns t f 350 ns Q g 2300 nC Q gs V GS = 10 V, V DS = 0.5 • VDSS , ID = 0.5 • ID25 420 nC Q gd 1150 nC R thJC 0.051 K/W R thJK with 30 µm heat transfer paste 0.076 K/W Source-Drain Diode Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. I S V GS = 0 V 418 A I SM Repetitive; pulse width limited by T JM 1672 A V SD I F = I S; VGS = 0 V, 0.9 1.2 V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr I F = I S, -di/dt = 1200 A/µs, VDS = 100 V 600 ns Dimensions in mm (1 mm = 0.0394") |
Аналогичный номер детали - VMO400-02F |
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Аналогичное описание - VMO400-02F |
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