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PK664BA датащит (PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD

№ деталь PK664BA
подробность  N-Channel Enhancement Mode MOSFET
скачать  8 Pages
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производитель  UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]
домашняя страница  http://www.unikc.com.cn/
Logo UNIKC - Wuxi U-NIKC Semiconductor CO.,LTD

PK664BA Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD

  PK664BA Datasheet HTML 1Page - Wuxi U-NIKC Semiconductor CO.,LTD  
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PK664BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
THERMAL RESISTANCE RATINGS
UNITS
1Pulse width limited by maximum junction temperature.
2The value of Rq
JA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 51A.
TA= 70 °C
18
Power Dissipation
TA = 25 °C
2.4
Continuous Drain Current
TA = 25 °C
ID
RqJA
PD
W
1.5
23
TC = 25 °C
EAS
TC = 100 °C
Power Dissipation
TJ, Tstg
PD
±20
Pulsed Drain Current
1
115
TA = 70 °C
23
ID
TC = 25 °C
30V
Continuous Drain Current
3
TC = 100 °C
PARAMETERS/TEST CONDITIONS
RDS(ON)
Drain-Source Voltage
2.4mΩ @V
GS = 10V
114A
Junction-to-Ambient
2
THERMAL RESISTANCE
Avalanche Energy
L =0.1mH
Junction-to-Case
RqJC
MAXIMUM
Avalanche Current
IAS
48
W
mJ
UNITS
250
72
TYPICAL
VDS
30
ID
IDM
SYMBOL
LIMITS
Operating Junction & Storage Temperature Range
SYMBOL
°C
-55 to 150
51
VGS
Gate-Source Voltage
V
A
2.1
°C / W
59
114
REV 1.1
1
2016/6/23


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