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AO9926A датащит (PDF) 2 Page - VBsemi Electronics Co.,Ltd

№ деталь AO9926A
подробность  Dual N-Channel 20-V (D-S) MOSFET
скачать  7 Pages
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производитель  VBSEMI [VBsemi Electronics Co.,Ltd]
домашняя страница  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AO9926A Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

  AO9926A Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd  
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Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.6
1.5
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
µA
VDS = 20 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 4.5 V
20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 7.1 A
0.019
0.025
Ω
VGS = 2.5 V, ID = 6.0 A
0.026
0.035
Forward Transconductancea
gfs
VDS = 10 V, ID = 7.1 A
27
S
Diode Forward Voltagea
VSD
IS = 1.7 A, VGS = 0 V
1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V, ID = 7.1 A
9.5
nC
Gate-Source Charge
Qgs
1.5
Gate-Drain Charge
Qgd
2.5
Gate Resistance
Rg
f = 1 MHz
1.6
2.7
Ω
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 4.5 V, Rg = 10 Ω
10
ns
Rise Time
tr
15
Turn-Off Delay Time
td(off)
38
Fall Time
tf
25
Source-Drain Reverse Recovery Time
trr
IF = 1.7 A, dI/dt = 100 A/µs
26
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AO9926A
2


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