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AOD2916 датащит (PDF) 1 Page - VBsemi Electronics Co.,Ltd

№ деталь AOD2916
подробность  N-Channel 100-V (D-S) MOSFET
скачать  8 Pages
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производитель  VBSEMI [VBsemi Electronics Co.,Ltd]
домашняя страница  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AOD2916 Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

  AOD2916 Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd  
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N-Channel 100-V (D-S) MOSFET
FEATURES
TrenchFET® Power MOSFETS
175 °C Junction Temperature
Low Thermal Resistance Package
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)ID (A)
100
0.0
30 at VGS = 10 V
40
0.0
at VGS = 4.5 V
37
D
G
S
N-Channel MOSFET
Notes:
a. Duty cycle
≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
ID
40
A
TC = 125 °C
23
Pulsed Drain Current
IDM
120
Avalanche Current
IAR
35
Repetitive Avalanche Energya
L = 0.1 mH
EAR
61
mJ
Maximum Power Dissipationa
TC = 25 °C
PD
107b
W
TA = 25 °C
c
3.75
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
(PCB Mount)c
RthJA
40
°C/W
Junction-to-Case (Drain)
RthJC
1.4
Available
RoHS*
COMPLIANT
TO-252
S
GD
Top View
35
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AOD2916
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