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AOD2916 датащит (PDF) 2 Page - VBsemi Electronics Co.,Ltd

№ деталь AOD2916
подробность  N-Channel 100-V (D-S) MOSFET
скачать  8 Pages
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производитель  VBSEMI [VBsemi Electronics Co.,Ltd]
домашняя страница  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AOD2916 Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

  AOD2916 Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd  
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Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VSS = 0 V, ID = 250 µA
100
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
13
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V
, VGS = 0 V
1
µA
VDS= 100 V, VGS = 0 V, TJ = 125 °C
50
VDS= 100 V, VGS = 0 V, TJ = 175 °C
250
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
75
A
Drain-Source On-State Resistancea
rDS(on)
VGS = 10 V, ID = 5 A
0.0
30
Ω
VGS = 4.5 V, ID = 3 A
0.0
VGS = 10 V, ID = 5 A, TJ = 125 °C
0.0
VGS = 10 V, ID = 3 A, TJ = 175 °C
0.0
67
Forward Transconductancea
gfs
VDS = 15 V, ID = 15 A
10
S
Dynamicb
Input Capacitance
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
2600
pF
Output Capacitance
Coss
290
Reverse Transfer Capacitance
Crss
120
Total Gate Chargec
Qg
VDS = 50 V, VGS = 10 V, ID = 40 A
35
60
nC
Gate-Source Chargec
Qgs
11
Gate-Drain Chargec
Qgd
9
Gate Resistance
RG
1.7
Ω
Turn-On Delay Timec
td(on)
VDD = 50 V, RL = 1.25 Ω
ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω
11
20
ns
Rise Timec
tr
12
20
Turn-Off Delay Timec
td(off)
30
45
Fall Timec
tf
12
20
Source-Drain Diode Ratings and Characteristics TC = 25 °C
b
Continuous Current
IS
40
A
Pulsed Current
ISM
120
Forward Voltagea
VSD
IF = 30 A, VGS = 0 V
1.0
1.5
V
Reverse Recovery Time
trr
IF = 30 A, di/dt = 100 A/µs
60
100
ns
Peak Reverse Recovery Current
IRM(REC)
58
A
Reverse Recovery Charge
Qrr
0.15
0.4
µC
35
53
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AOD2916
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